Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices, Advances in Materials Science and Engineering, vol. Baishya, Voltage and Oxide Thickness Dependent Tunneling Current Density and Tunnel Resistivity Model: Application to High-k Material HfO2 Based MOS Devices, Superlattices and Microstructures, vol. Ieee tencon 2015, doi:.1109/tencon.2015.7373072 Koushik Guha,. Of the International Conference on Artificial Intelligence and Machine Learning (aiml Dubai, UAE, 12-14 April, 2011,. Singh, Analysis of Spectrum Handoff Under Diverse Mobile Traffic Distribution Model in Cognitive Radio, in Proc. Maity, Ajay Singh,. 500-504, doi:.1109/IndiaCom.2014.6828188 Koushik Guha, Mithlesh Kumar, Ajay Parmar, and. Baishya, Influence of Image Force Effect on Tunneling Current Density for High-k Material ZrO2 Ultra Thin Films Based MOS Devices, Journal of Nanoelectronics and Optoelectronics, vol. Baishya, Electrical noise in Circular Gate Tunnel FET in presence of interface traps, Superlattices and microstructures, vol.
Baishya, Controlling the fixed trap charge effect in FinFET using heterodielectric BOX, Electronics Letters, vol. Baishya, Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices, Nanoscience and Nanotechnology Letters, vol. Baishya, Performance analysis of low power and high frequency novel RF Power Amplifier for 4G systems, in Proc. Baishya, "A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices Superlattices and Microstructures. Sarkar, Performance Evaluation of Analog Circuits With Deep Submicrometer mosfets in the Subthreshold Regime of Operation, in Proc. Baishya, Effect of gate dielectric on electrical parameters due to metal gate WFV in n-channel Si step FinFET, Micro Nano Letters, vol. Sarkar, A Two-Dimensional Surface Potential Based Subthreshold-Slope Model for Short-Channel MOS Transistors, in Proc.
Buccal tablets thesis pdf
English reading comprehension thesis